Vishay Intertechnology 600 V Series EF Fast Body Diode MOSFET in a low profile PowerPAK® 10×12 package delivers the lowest RDS(ON) in the industry* Qg FOM – EEJournal

The N-Channel enables high power density with reduced conduction and switching losses for increased efficiency

MALVERN, PA – October 5, 2022 – Presented by Vishay Intertechnology, Inc. (NYSE: VSH) Today, a 4th generation, 600V series EF fast-structure MOSFET diode in a low-profile PowerPAK® 10 x 12 package. The Vishay Siliconix n-channel SiHK045N60EF delivers high efficiency and power density for telecom, industrial and computing applications, and reduces resistance by 29% compared to previous generation devices while providing 60% less gate charge. This results in the industry’s lowest gate-charge-resistance times for in-class devices, and is a key figure for merit (FOM) for 600 V MOSFETs used in power switching applications.

Vishay offers a wide range of MOSFET technologies that support all phases of the power conversion process, from high voltage inputs to low voltage outputs required to power the latest high-tech equipment. With the SiHK045N60EF and other devices in the fourth generation 600 V EF series family, the company is addressing the need for efficiency and power density improvements in two early stages of the power system architecture — bridgeless power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications include high-end computing and data storage; UBS; High Intensity Discharge (HID) lamps and fluorescent ballast lighting; solar inverters welding equipment; Induction heating of automobile engines and battery chargers.

Based on Vishay’s latest energy-efficient E-Series superjunction technology, the SiHK045N60EF’s typical low impedance of 0.045 Ω at 10 V is 27% lower than that of devices in the PowerPAK 8 x 8 package. The result is a higher power rating for 3 kW applications, While the device’s low profile of 2.3mm increases its power density. In addition, the MOSFET provides an extremely low gate charge of up to 70 °C. The output FOM of 3.15 Ω*nC is 2.27% lower than the nearest competitor MOSFET in the same class, which translates into lower conduction and switching losses to save power and increase efficiency. This allows the device to address specific titanium efficiency requirements in server power supplies or reach 98% of the maximum efficiency in communications power supplies.

To improve the switching performance in zero-voltage switching (ZVS) topologies such as LLC resonance transformers, the SiHK045N60EF provides effective low Co(er) and Co(tr) output amplitudes of 171 pf and 1069 pF, respectively. The device’s Co(tr) is 8.79% lower than the closest competitor MOSFET in the same class, while the fast body diode delivers a low Qrr of 0.8 μC for increased reliability in bridge topologies. Additionally, with a maximum junction with a casing thermal resistance rating of 0.45°C/W, the PowerPAK 10 x 12 MOSFET package provides the best thermal capacity of any surface-mounted package. Compared to hardware in the PowerPAK 8 x 8, the SiHK045N60EF offers 31% lower thermal resistance.

The MOSFET is designed to withstand overvoltage crossings in avalanche mode with limits guaranteed by 100% UIS testing, and the MOSFET released today is RoHS compliant, halogen free, and Vishay Green.

Samples and production quantities of SiHK045N60EF are now available. Lead time information may be requested from your Vishay sales contact.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductor and passive electronic components that are essential for innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace and medical markets. Serving customers all over the world, Vishay is the DNA of technology. ™ Vishay Intertechnology, Inc. is a Fortune 1,000 company listed on the NYSE (VSH). More about Vishay at

DNA of tech™ is a trademark of Vishay Intertechnology. PowerPAK is a registered trademark of Siliconix Corporation.

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